18700
Overview
An innovative method to generate spin current and magnetoresistance by leveraging the Orbital Hall Effect (OHE). This approach utilizes ordinary metals like Aluminum and Copper, combined with a thin layer of heavy metal to convert orbital currents into spin currents. By minimizing the reliance on expensive heavy metals such as Platinum and Tungsten, the technology significantly reduces production costs while preserving performance, making it highly suitable for spintronic and magnetic devices.
Applications
- Magnetic field sensors
- Spintronic and spin-torque devices
- Memory devices and computational applications
- Data storage solutions
- Spin-based sensors for biomedical, environmental, and navigation uses
Differentiation
- Substantial reduction in heavy metal usage, lowering production costs
- Compatibility with existing CMOS fabrication technologies
- Independence from the Spin Hall Effect in Heavy Metals
- Use of key semiconductor metals (e.g., Copper, Aluminum) for spin current generation
Development Stage
The technology has been demonstrated at the die level, generating spin currents via the orbital Hall effect in Copper and Aluminum, with a thin Platinum layer enabling measurable results consistent with theoretical predictions.
References
- Xiao, J., Liu, Y. & Yan, B. Detection of the Orbital Hall Effect by the Orbital-Spin Conversion. In Memorial Volume for Shoucheng Zhang (pp. 353-364). https://doi.org/10.1142/9789811231711_0015
- Rothschild, A. et al. Generation of spin currents by the orbital Hall effect in Cu and Al and their measurement by a Ferris-wheel ferromagnetic resonance technique at the wafer level. Phys. Rev. B 106, 144415 (2022). DOI: 10.1103/PhysRevB.106.144415
Patent Status:
USA Published: Publication Number: US 2023-0309411 A1
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