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Chiral Memory – highly efficient data storage

Technology Number: 


Principal Investigator



Chemical Physics

Computer memory and storage are among the most critical components of today’s consumer electronics and computer technology. Currently available memory and storage technologies have inherent limitations that confine the capacity and speed of access to memory devices.

The present innovation is based on Chiral Induced Spin Selectivity (CISS) effect that was established experimentally and theoretically in the last decade, and allows for production of inexpensive, high-density universal memory-on-chip devices, that don’t require the use of permanent magnets.


·         Inexpensive, high-density universal memory-on-chip devices

·         The technology can be used as superior alternative for both Random Access memory and Flash memory

·         Surface-controlled spintronic devices

·         Logic and data processing


·         Up to 70 times more storage on the same physical size

·         Up to 100 times lower energy consumption

·         Si-Compatible

·         High density (can reach Si technology limit)

·         Estimated low cost

·         Overcomes limitations of other magnetic-based memory technologies

Technology's Essence

Ferromagnets can be magnetized either by external magnetic fields or by spin polarized current. However, the current density required for inducing magnetization is extremely high and significantly affects the device’s structure and performance. The newly discovered CISS effect allows for magnetization switching of Ferromagnets, which is induced solely by adsorption of chiral molecules, where much lower current density is sufficient to induce the magnetization reversal. Chiral Memory technology uses the CISS effect for spin selectivity instead of the common ferromagnetic-based spin filters. This allows, in principle, the memory bit to be miniaturized down to a single magnetic nanoparticle or a nano-scale domain. The operation principle of the device relies on the spin-selective transmission of electrons through organic chiral molecules to the ferromagnetic layer of the device, which results in the magnetization of this layer and efficient storing of bits of information. The magnetization switching by local adsorption of chiral molecules eliminates the need for a permanent magnet.

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